Titanium germanium antimonide, TiGeSb

Titanium germanium anti­monide, TiGeSb

TiGeSb adopts the PbFCl- or ZrSiS-type structure, with Ti atoms (4mm symmetry) centred within monocapped square anti-prisms generated by the stacking of denser square nets of Ge atoms (m2 symmetry) alternating with less dense square nets of Sb atoms (4mm symmetry).

Gold Catalyzed Germanium Nanowires on Titanium

Germanium nanowires have been grown successfully on titanium. The wires are single crystal, with some low angle stacking faults and other defects. Growth of nanowires on metal substrates offers reduced cost over single crystal substrates, while still offering an electrical contact to the wire core for core-shell junction structures. Summary of Research: Figure 1: 80 nm germanium nanowires on a ...

Self- and Zinc Diffusion in Gallium Antimonide

Antimonide-based pN terahertz mixer diodes

High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These ...

Indium Antimonide Nanowires: Synthesis and Properties

This article summarizes some of the critical features of pure indium antimonide nanowires (InSb NWs) growth and their potential applications in the industry. In the first section, historical studies on the growth of InSb NWs have been presented, while in the second part, a comprehensive overview of the various synthesis techniques is demonstrated briefly. The major emphasis of current review is...